Highly boron-doped germanium layers on Si(001) grown by...

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Semiconductor Science and Technology 2018 / 09

Highly boron-doped germanium layers on Si(001) grown by carbon-mediated epitaxy

Barnscheidt, Yvo, Schmidt, Jan, Wetzel, Gustav, Tetzlaff, Dominic, Wietler, Tobias, Osten, H Joerg
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Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/1361-6641/aade69
Date:
September, 2018
File:
PDF, 1.26 MB
english, 2018
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