Combined effect of the indium content and well width on electroluminescence in InGaN/GaN multiple quantum well-based LEDs
Lv, Haiyan, Li, Changfu, Li, Jianfei, Xu, Mingsheng, Ji, Ziwu, Shi, Kaiju, Xu, Xinglian, Li, Hongbin, Xu, XiangangVolume:
7
Language:
english
Journal:
Materials Express
DOI:
10.1166/mex.2017.1396
Date:
December, 2017
File:
PDF, 820 KB
english, 2017