Temperature Dependent Vertical Conduction of GaN HEMT Structures on Silicon and Bulk GaN Substrates
Heuken, Lars, Alshahed, Muhammad, Ottaviani, Alessandro, Alomari, Mohammed, Heuken, Michael, Wächter, Clemens, Bergunde, Thomas, Cora, Ildikó, Tóth, Lajos, Pécz, Béla, Burghartz, Joachim N.Language:
english
Journal:
physica status solidi (a)
DOI:
10.1002/pssa.201800482
Date:
September, 2018
File:
PDF, 1.34 MB
english, 2018