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Development of self-rectifying ZnO thin film resistive switching memory device using successive ionic layer adsorption and reaction method
Dongle, Vrushali S., Dongare, Akshata A., Mullani, Navaj B., Pawar, Pravin S., Patil, Prashant B., Heo, Jaeyeong, Park, Tae Joo, Dongale, Tukaram D.Language:
english
Journal:
Journal of Materials Science: Materials in Electronics
DOI:
10.1007/s10854-018-9997-9
Date:
September, 2018
File:
PDF, 2.44 MB
english, 2018