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High-efficiency GaN-based LED with patterned SiO2 current blocking layer deposited on patterned ITO
Zhou, Shengjun, Liu, Mengling, Xu, Haohao, Liu, Yingce, Gao, Yilin, Ding, Xinghuo, Lan, Shuyu, Fan, Yuchen, Gui, Chengqun, Liu, ShengLanguage:
english
Journal:
Optics & Laser Technology
DOI:
10.1016/j.optlastec.2018.08.049
Date:
September, 2018
File:
PDF, 2.36 MB
english, 2018