Rapid Improvement in Thin Film Transistors with...

IEEE Electron Device Letters 2018

Rapid Improvement in Thin Film Transistors with Atomic-Layer-Deposited InOx Channels via O2 Plasma Treatment

Ma, Qian, Shao, Yan, Wang, Y.-P., Zheng, H.-M., Zhu, B., Liu, W.-J., Ding, Shi-Jin, Zhang, D. W.

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Year:

2018

Language:

english

Journal:

IEEE Electron Device Letters

DOI:

10.1109/LED.2018.2869019

File:

PDF, 660 KB

english, 2018

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