Triangular Defects Reduction and Uniformity Improvement of...

Materials Science Forum 2018 / 6 Vol. 924

Triangular Defects Reduction and Uniformity Improvement of 4H-SiC Epitaxial Growth in a Planetary Reactor

Lu, Wei Li, Li, Jia, Fang, Yu Long, Yin, Jia Yun, Feng, Zhi Hong
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Volume:
924
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.924.104
Date:
June, 2018
File:
PDF, 562 KB
english, 2018
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