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THz detectors based on Si-CMOS technology field effect transistors – advantages, limitations and perspectives for THz imaging and spectroscopy
Marczewski, J., Coquillat, D., Knap, W., Kolacinski, C., Kopyt, P., Kucharski, K., Lusakowski, J., Obrebski, D., Tomaszewski, D., Yavorskiy, D., Zagrajek, P., Ryniec, R., Palka, N.Volume:
26
Language:
english
Journal:
Opto-Electronics Review
DOI:
10.1016/j.opelre.2018.08.002
Date:
December, 2018
File:
PDF, 2.76 MB
english, 2018