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Bilayer h-BN barriers for tunneling contacts in fully-encapsulated monolayer MoSe2 field-effect transistors
Ghiasi, Talieh S., Quereda, Jorge, van Wees, Bart JLanguage:
english
Journal:
2D Materials
DOI:
10.1088/2053-1583/aadf47
Date:
September, 2018
File:
PDF, 11.03 MB
english, 2018