Mechanism for phosphorus deactivation in silicon-based...

Applied Physics 2018 / 10 Vol. 124; Iss. 10

Mechanism for phosphorus deactivation in silicon-based Schottky diodes submitted to MW-ECR hydrogen plasma

Belfennache, D., Madi, D., Brihi, N., Aida, M. S., Saeed, M. A.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
124
Language:
english
Journal:
Applied Physics A
DOI:
10.1007/s00339-018-2118-z
Date:
October, 2018
File:
PDF, 1.44 MB
english, 2018
Conversion to is in progress
Conversion to is failed