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Study on electronic properties of diamond/SiNx-coated AlGaN/GaN high electron mobility transistors operating up to 500 °C
Babchenko, Oleg, Vanko, Gabriel, Gerboc, Michal, Ižák, Tibor, Vojs, Marian, Lalinský, Tibor, Kromka, AlexanderVolume:
89
Language:
english
Journal:
Diamond and Related Materials
DOI:
10.1016/j.diamond.2018.09.014
Date:
October, 2018
File:
PDF, 1014 KB
english, 2018