Dark current improvement due to dry-etch process in...

Infrared Physics & Technology 2018 / 11 Vol. 94

Dark current improvement due to dry-etch process in InAs/GaSb type-II superlattice LWIR photodetector with nBn structure

Lee, H.J., Jung, H.C., Jang, A., Kim, J.G., Ko, S.Y., Kim, Y.H., Nah, J.
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Volume:
94
Language:
english
Journal:
Infrared Physics & Technology
DOI:
10.1016/j.infrared.2018.09.009
Date:
November, 2018
File:
PDF, 1.39 MB
english, 2018
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