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Influence on Curvature Induced Stress to the Flatband Voltage and Interface Density of 4H-SiC MOS Structure
Xu, Hengyu, Wan, Caiping, Sang, Ling, Ao, Jin-PingLanguage:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2018.09.024
Date:
September, 2018
File:
PDF, 477 KB
english, 2018