Growth and characterization of highly tensile strained Ge...

Journal of Applied Physics 2016 / 03 Vol. 119; Iss. 12

Growth and characterization of highly tensile strained Ge 1−x Sn x formed on relaxed In y Ga 1−y P buffer layers

Wang, Wei, Loke, Wan Khai, Yin, Tingting, Zhang, Zheng, D'Costa, Vijay Richard, Dong, Yuan, Liang, Gengchiau, Pan, Jisheng, Shen, Zexiang, Yoon, Soon Fatt, Tok, Eng Soon, Yeo, Yee-Chia
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Volume:
119
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4944718
Date:
March, 2016
File:
PDF, 2.41 MB
english, 2016
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