Characteristics and threshold voltage model of GaN-based...

Chinese Physics B 2018 / 09 Vol. 27; Iss. 9

Characteristics and threshold voltage model of GaN-based FinFET with recessed gate

Wang, Chong, Wang, Xin, Zheng, Xue-Feng, Wang, Yun, He, Yun-Long, Tian, Ye, He, Qing, Wu, Ji, Mao, Wei, Ma, Xiao-Hua, Zhang, Jin-Cheng, Hao, Yue
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Volume:
27
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/27/9/097308
Date:
September, 2018
File:
PDF, 709 KB
english, 2018
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