Methodology to separate channel conductions of two level...

Solid-State Electronics 2018 / 11 Vol. 149

Methodology to separate channel conductions of two level vertically stacked SOI nanowire MOSFETs

Paz, Bruna Cardoso, Cassé, Mikaël, Barraud, Sylvain, Reimbold, Gilles, Vinet, Maud, Faynot, Olivier, Pavanello, Marcelo Antonio
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Volume:
149
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2018.08.012
Date:
November, 2018
File:
PDF, 4.38 MB
english, 2018
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