Composition dependence of penetration range and backscattering coefficient of electrons impinging on Si Ge1− and GaAs N1− semiconducting alloys
Khan, M. Ajmal, Algarni, H., Bouarissa, N., Al-Hagan, O.A., Alhuwaymel, T.F.Volume:
195
Language:
english
Journal:
Ultramicroscopy
DOI:
10.1016/j.ultramic.2018.08.023
Date:
December, 2018
File:
PDF, 596 KB
english, 2018