Joint effect of temperature and voltage rise rate on the switching process of Si thyristors triggered in impact-ionization wave mode
Gusev, Anton, Lyubutin, Sergei, Rukin, Sergei, Slovikovsky, Boris, Tsyranov, Sergei, Perminova, OlgaLanguage:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/1361-6641/aae1f0
Date:
September, 2018
File:
PDF, 741 KB
english, 2018