Nanoscale etching of III-V semiconductors in acidic...

Applied Surface Science 2019 / 01 Vol. 465

Nanoscale etching of III-V semiconductors in acidic hydrogen peroxide solution: GaAs and InP, a striking contrast in surface chemistry

van Dorp, Dennis H., Arnauts, Sophia, Laitinen, Mikko, Sajavaara, Timo, Meersschaut, Johan, Conard, Thierry, Kelly, John J.
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Volume:
465
Language:
english
Journal:
Applied Surface Science
DOI:
10.1016/j.apsusc.2018.09.181
Date:
January, 2019
File:
PDF, 2.23 MB
english, 2019
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