[AIP Physics and chemistry of mercury cadmium telluride and novel IR detector materials - San Francisco, California (USA) (2−4 Oct 1990)] AIP Conference Proceedings - Dislocation density variations in HgCdTe films grown by dipping liquid phase epitaxy: Effects on metal-insulator-semiconductor properties
Chandra, D., Tregilgas, J. H., Goodwin, M. W.Volume:
235
Year:
1991
Language:
english
DOI:
10.1063/1.41063
File:
PDF, 1.08 MB
english, 1991