(Invited) GaN Buried Channel Normally Off...

ECS Transactions 2018 / 07 Vol. 86; Iss. 10

(Invited) GaN Buried Channel Normally Off MOSHEMT: Design Optimization and Experimental Integration on Silicon Substrate

Soman, Rohith, Sharma, Manish, Ramesh, Nayana, Nath, Digbijoy, Muralidharan, R, Bhat, K N, Raghavan, Srinivasan, Bhat, Navakanta
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Volume:
86
Language:
english
Journal:
ECS Transactions
DOI:
10.1149/08610.0161ecst
Date:
July, 2018
File:
PDF, 1002 KB
english, 2018
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