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Quasi-two-dimensional β-Ga2O3 field effect transistors with large drain current density and low contact resistance via controlled formation of interfacial oxygen vacancies
Li, Zhen, Liu, Yihang, Zhang, Anyi, Liu, Qingzhou, Shen, Chenfei, Wu, Fanqi, Xu, Chi, Chen, Mingrui, Fu, Hongyu, Zhou, ChongwuLanguage:
english
Journal:
Nano Research
DOI:
10.1007/s12274-018-2193-7
Date:
September, 2018
File:
PDF, 2.29 MB
english, 2018