Influence of surface step width of 4H-SiC substrates on the GaN crystal quality
Yang, Qiankun, Zhang, Dongguo, Li, Zhonghui, Luo, Weike, Pan, LeiVolume:
504
Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2018.09.028
Date:
December, 2018
File:
PDF, 633 KB
english, 2018