High Performance InAlN/GaN/Si High Electron Mobility...

ECS Journal of Solid State Science and Technology 2018 Vol. 7; Iss. 10

High Performance InAlN/GaN/Si High Electron Mobility Transistor Using Microwave Ohmic Annealing Technique

Chiu, Hsien-Chin, Chou, Lung-I, Wang, Hsiang-Chun, Kao, Hsuan-Ling, Lin, Chia-Han, Chen, Ji-Xian, Chyi, Jen-Inn, Chen, Chih-Tien, Chang, Kuo-Jen
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Volume:
7
Year:
2018
Language:
english
Journal:
ECS Journal of Solid State Science and Technology
DOI:
10.1149/2.0071810jss
File:
PDF, 984 KB
english, 2018
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