Enhanced electrical properties in solution-processed InGaZnO thin-film transistors by viable hydroxyl group transfer process
Kim, Do-Kyung, Jeong, Hyeon-Seok, Kwon, Hyeok Bin, Kim, Young-Rae, Kang, Shin-Won, Bae, Jin-HyukVolume:
57
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.57.05GC02
Date:
May, 2018
File:
PDF, 990 KB
english, 2018