Properties of the Biexciton and the Electron-Hole-Plasma in...

MRS Internet Journal of Nitride Semiconductor Research 1997 Vol. 2

Properties of the Biexciton and the Electron-Hole-Plasma in Highly Excited GaN

Holst, J.-Chr., Eckey, L., Hoffmann, A., Broser, I., Amano, H., Akasaki, I.
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Volume:
2
Year:
1997
Language:
english
Journal:
MRS Internet Journal of Nitride Semiconductor Research
DOI:
10.1557/S1092578300001514
File:
PDF, 167 KB
english, 1997
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