Characteristic of BCE Type IGZO Thin Film Transistor Device...

Journal of Nanoscience and Nanotechnology 2017 / 11 Vol. 17; Iss. 11

Characteristic of BCE Type IGZO Thin Film Transistor Device with Various Source/Drain Metals

Kim, Byoung O, Kim, Jeong-Hyeon, Choe, HeeHwan, Jeon, Jae-Hong, Seo, Jong Hyun
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Volume:
17
Language:
english
Journal:
Journal of Nanoscience and Nanotechnology
DOI:
10.1166/jnn.2017.15162
Date:
November, 2017
File:
PDF, 4.02 MB
english, 2017
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