Simulation study of single event effects in the SiC LDMOS...

Microelectronics Reliability 2018 / 12 Vol. 91

Simulation study of single event effects in the SiC LDMOS with a step compound drift region

Bao, Meng-tian, Wang, Ying, Li, Xing-ji, Liu, Chao-ming, Yu, Cheng-hao, Cao, Fei
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Volume:
91
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2018.09.002
Date:
December, 2018
File:
PDF, 4.65 MB
english, 2018
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