V subthreshold hysteresis technology and temperature...

Microelectronics Reliability 2018 / 09 Vol. 88-90

V subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs

Asllani, Besar, Fayyaz, Asad, Castellazzi, Alberto, Morel, Hervé, Planson, Dominique
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Volume:
88-90
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2018.06.047
Date:
September, 2018
File:
PDF, 1.60 MB
english, 2018
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