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Wide range control of Schottky barrier heights at metal/Ge interfaces with nitrogen-contained amorphous interlayers formed during ZrN sputter deposition
Yamamoto, Keisuke, Noguchi, Ryutaro, Mitsuhara, Masatoshi, Nishida, M., Hara, T, Wang, Dong, Nakashima, HiroshiLanguage:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/1361-6641/aae4bd
Date:
September, 2018
File:
PDF, 1.01 MB
english, 2018