Effect of Misorientation and Preliminary Etching of the Substrate on the Structural and Optical Properties of Integrated GaAs/Si(100) Heterostructures Produced by Vapor Phase Epitaxy
Seredin, P. V., Goloshchapov, D. L., Zolotukhin, D. S., Lenshin, A. S., Lukin, A. N., Khudyakov, Yu. Yu., Arsentyev, I. N., Zhabotinsky, A. V., Nikolaev, D. N., Pikhtin, N. A.Volume:
52
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S1063782618080195
Date:
August, 2018
File:
PDF, 910 KB
english, 2018