Characterisation and comparison between different S-bend...

Semiconductor Science and Technology 2018 / 11 Vol. 33; Iss. 11

Characterisation and comparison between different S-bend shaped GaAs Y-branch distributed Bragg reflector lasers emitting at 976 nm

Tawfieq, Mahmoud, Fricke, Jörg, Müller, André, Della Casa, Pietro, Ressel, Peter, Ginolas, Arnim, Wenzel, Hans, Sumpf, Bernd, Tränkle, Günther
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Volume:
33
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/1361-6641/aadfbd
Date:
November, 2018
File:
PDF, 1.85 MB
english, 2018
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