An improved DRBL AlGaN/GaN HEMT with high power added...

Materials Science in Semiconductor Processing 2019 / 01 Vol. 89

An improved DRBL AlGaN/GaN HEMT with high power added efficiency

Jia, Hujun, Zhu, Shunwei, Hu, Mei, Tong, Yibo, Li, Tao, Yang, Yintang
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Volume:
89
Language:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2018.09.013
Date:
January, 2019
File:
PDF, 402 KB
english, 2019
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