Improved memristive switching of graphite/Nb:SrTiO 3 interfaces by tuning Fermi levels and dielectric constants
Zhu, Xiaochen, Jin, Haoming, Li, Ang J., Schumann, Todd, Hebard, Arthur F.Volume:
124
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.5037950
Date:
October, 2018
File:
PDF, 1.12 MB
english, 2018