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Publisher Correction to: Effect of strain modification on crystallinity and luminescence of InGaN/GaN multiple quantum wells grown by MOCVD
Yao, Shun, Lan, Tian, Zhou, Guangzheng, Li, Ying, Lang, Luguang, Yu, Hongyan, Lv, Zhaochen, Wang, ZhiyongVolume:
124
Language:
english
Journal:
Applied Physics A
DOI:
10.1007/s00339-018-2103-6
Date:
October, 2018
File:
PDF, 558 KB
english, 2018