Statistical analysis of characteristic of ageing precursor...

Microelectronics Reliability 2018 / 09 Vol. 88-90

Statistical analysis of characteristic of ageing precursor of IGBT based on synthetic effect of multi-physical fields

Ma, Mingyao, Chu, Kaiqi, Zhan, Mingyue, Wang, Ye, Liu, Fang
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
88-90
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2018.07.010
Date:
September, 2018
File:
PDF, 1.82 MB
english, 2018
Conversion to is in progress
Conversion to is failed