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Solid-State Electronics 2018 / 10

Gradual switching and self-rectifying characteristics of Cu/α-IGZO/p+-Si RRAM for synaptic device application

Bang, Suhyun, Kim, Sungjun, Kim, Min-Hwi, Kim, Tae-Hyeon, Lee, Dong Keun, Cho, Seongjae, Park, Byung-Gook
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Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2018.10.003
Date:
October, 2018
File:
PDF, 2.82 MB
english, 2018
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