A Fully Analytical Current Model for Tunnel Field-Effect...

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IEEE Transactions on Electron Devices 2018

A Fully Analytical Current Model for Tunnel Field-Effect Transistors Considering the Effects of Source Depletion and Channel Charges

Lyu, Zhijun, Lu, Hongliang, Zhang, Yuming, Zhang, Yimen, Lu, Bin, Cui, Xiaoran, Zhao, Yingxiang
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Year:
2018
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2018.2870249
File:
PDF, 2.54 MB
english, 2018
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