(Invited) Vacancy-Type Defects and Their...

ECS Transactions 2018 / 07 Vol. 86; Iss. 10

(Invited) Vacancy-Type Defects and Their Carrier Trapping Properties in GaN Studied by Monoenergetic Positron Beams

Uedono, Akira, Tanaka, Taketoshi, Ito, Norikazu, Nakahara, Ken, Egger, Werner, Hugenschmidt, Christoph, Ishibashi, Shoji, Sumiya, Masatomo
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Volume:
86
Language:
english
Journal:
ECS Transactions
DOI:
10.1149/08610.0149ecst
Date:
July, 2018
File:
PDF, 625 KB
english, 2018
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