Bias voltage criteria of gate shielding effect for protecting IGBTs from shoot-through phenomena
Tsukuda, M., Abe, S., Hasegawa, K., Ninomiya, T., Omura, I.Volume:
88-90
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2018.06.026
Date:
September, 2018
File:
PDF, 1.18 MB
english, 2018