Impact of the substrate and buffer design on the...

Microelectronics Reliability 2018 / 09 Vol. 88-90

Impact of the substrate and buffer design on the performance of GaN on Si power HEMTs

Borga, M., Meneghini, M., Stoffels, S., Van Hove, M., Zhao, M., Li, X., Decoutere, S., Zanoni, E., Meneghesso, G.
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Volume:
88-90
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2018.06.036
Date:
September, 2018
File:
PDF, 536 KB
english, 2018
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