Temperature dependence on the electrical and physical...

Chinese Physics B 2018 / 09 Vol. 27; Iss. 9

Temperature dependence on the electrical and physical performance of InAs/AlSb heterojunction and high electron mobility transistors

Zhang, Jing, Lv, Hongliang, Ni, Haiqiao, Niu, Zhichuan, Zhang, Yuming
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Volume:
27
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/27/9/097201
Date:
September, 2018
File:
PDF, 753 KB
english, 2018
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