![](/img/cover-not-exists.png)
Dependences of contraction/expansion of stacking faults on temperature and current density in 4H-SiC p–i–n diodes
Okada, Aoi, Nishio, Johji, Iijima, Ryosuke, Ota, Chiharu, Goryu, Akihiro, Miyazato, Masaki, Ryo, Mina, Shinohe, Takashi, Miyajima, Masaaki, Kato, Tomohisa, Yonezawa, Yoshiyuki, Okumura, HajimeVolume:
57
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.57.061301
Date:
June, 2018
File:
PDF, 1.06 MB
english, 2018