Optimization of 1.3 µ m...

Laser Physics 2018 / 12 Vol. 28; Iss. 12

Optimization of 1.3 µ m InAs/GaAs quantum dot lasers epitaxially grown on silicon: taking the optical loss of metamorphic epilayers into account

Wang, Jun, Bai, Yiming, Liu, Huiyun, Cheng, Zhuo, Tang, Mingchu, Chen, Siming, Wu, Jiang, Papatryfonos, Konstantinos, Liu, Zizhou, Huang, Yongqing, Ren, Xiaomin
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Volume:
28
Language:
english
Journal:
Laser Physics
DOI:
10.1088/1555-6611/aae194
Date:
December, 2018
File:
PDF, 1.37 MB
english, 2018
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