Retraction notice to “High quality N-polar GaN...

Journal of Crystal Growth 2018 / 12 Vol. 503

Retraction notice to “High quality N-polar GaN two-dimensional growth on c-plane sapphire by metalorganic vapor phase epitaxy” [Journal of Crystal Growth, 366 (2013) 35-38]

Zhang, Yuantao, Dong, Xin, Li, Guoxing, Li, Wancheng, Zhang, Baolin, Du, Guotong
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
503
Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2018.09.044
Date:
December, 2018
File:
PDF, 227 KB
english, 2018
Conversion to is in progress
Conversion to is failed