Analysis of the degradation mechanisms occurring in the...

Microelectronics Reliability 2018 / 09 Vol. 88-90

Analysis of the degradation mechanisms occurring in the topside interconnections of IGBT power devices during power cycling

Dornic, N., Ibrahim, A., Khatir, Z., Tran, S.H., Ousten, J.-P., Ewanchuk, J., Mollov, S.
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Volume:
88-90
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2018.07.041
Date:
September, 2018
File:
PDF, 2.49 MB
english, 2018
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