The effect of the interfacial states by swift heavy ion...

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 2018 / 12 Vol. 436

The effect of the interfacial states by swift heavy ion induced atomic migration in 4H-SiC Schottky barrier diodes

Yang, Zhimei, Lan, Fan, Li, Yun, Gong, Min, Huang, Mingmin, Gao, Bo, Hu, Junkui, Ma, Yao
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Volume:
436
Language:
english
Journal:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
DOI:
10.1016/j.nimb.2018.09.024
Date:
December, 2018
File:
PDF, 2.75 MB
english, 2018
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