X-Band Power and Linearity Performance of Compositionally...

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IEEE Electron Device Letters 2018

X-Band Power and Linearity Performance of Compositionally Graded AlGaN Channel Transistors

Sohel, Shahadat H., Xie, Andy, Beam, Edward, Xue, Hao, Roussos, Jason A., Razzak, Towhidur, Bajaj, Sanyam, Cao, Yu, Meyer, David J., Lu, Wu, Rajan, Siddharth
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Year:
2018
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2018.2874443
File:
PDF, 271 KB
english, 2018
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