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Impact of the Metal-Gate Material Properties in FinFET (Versus FD-SOI MOSFET) on High-κ/Metal-Gate Work-Function Variation
Nam, Hyohyun, Shin, Changhwan, Park, Jung-DongYear:
2018
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2018.2872586
File:
PDF, 2.57 MB
english, 2018