(Invited) Advanced Replacement High-K/Metal Gate Stack Engineering for High-Performance Strained Silicon-Germanium FinFETs with High Ge Content
Hashemi, Pouya, Ando, Takashi, Cartier, Eduard A., Bruley, John, Lee, Choong-Hyun, Narayanan, VijayVolume:
86
Language:
english
Journal:
ECS Transactions
DOI:
10.1149/08607.0051ecst
Date:
July, 2018
File:
PDF, 446 KB
english, 2018